2sd1898 / 2sd1733 / 2sd1768s / 2sd1863 transistors power transistor (80v, 1a) 2sd1898 / 2sd1733 / 2sd1768s / 2sd1863 ! features 1) high v ceo , v ceo =80v 2) high i c , i c =1a (dc) 3) good h fe linearity 4) low v ce (sat) 5) complements the 2sb1260 / 2sb1241 / 2sb1181 ! ! ! ! structure epitaxial planer type npn silicon transistor ! ! ! ! external dimensions (units : mm) (1) emitter (2) collector (3) base rohm : spt eiaj : sc-72 2sd1768s (1) emitter (2) collector (3) base rohm : atv 2sd1863 (1) base (2) collector (3) emitter rohm : cpt3 eiaj : sc-63 2sd1733 (1) base (2) collector (3) emitter rohm : mpt3 eiaj : sc-62 2sd1898 abbreviated symbol : df taping specifications taping specifications ? 0.1 + 0.2 ? 0.05 + 0.1 ? 0.1 + 0.2 + 0.2 ? 0.1 (3) (2) (1) 4.00.3 1.00.2 0.50.1 2.5 3.00.2 1.50.1 1.50.1 0.40.1 0.50.1 0.40.1 0.4 1.5 4.5 1.60.1 ? 0.1 + 0.2 + 0.3 ? 0.1 2.3 0.2 2.3 0.2 0.65 0.1 0.9 0.75 5.5 1.5 0.3 6.5 0.2 5.1 c0.5 (3) (2) (1) 0.9 ? 0.1 + 0.2 1.0 0.2 0.55 0.1 9.5 0.5 2.5 1.5 2.3 0.5 0.1 30.2 (15min.) 40.2 0.45 5 (1) (2) (3) + 0.15 ? 0.05 2.5 + 0.4 ? 0.1 3min. 20.2 0.45 0.5 ? 0.05 + 0.15 1.0 6.80.2 2.50.2 1.05 0.450.1 2.54 2.54 0.50.1 0.9 4.40.2 14.50.5 (1) (2) (3) 0.65max.
2sd1898 / 2sd1733 / 2sd1768s / 2sd1863 transistors ! ! ! ! absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 5v collector current i c 1 a (dc) 2 a (pulse) ? 1 junction temperature tj 150 c storage temperature tstg ? 55~ + 150 c collector power dissipation p c 0.5 2 ? 2 1 ? 3 10 0.3 1 1.2 w w (tc=25 c) w ? 1 pw=20ms, duty=1 / 2 ? 2 printed circuit board 1.7mm thick, collector copper plating 1cm 2 or larger. ? 3 when mounted on a 40 40 0.7mm ceramic board. 2sd1898 2sd1733 2sd1768s 2sd1863 ! ! ! ! electrical characteristics (ta=25 c) parameter collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency output capacitance symbol bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) h fe f t cob min. 100 80 5 ? ? ? 180 2sd1863 2sd1733, 2sd1898 2sd1768s ? ? ? ? ? ? ? 0.15 ? 100 20 ? ? ? 1 1 0.4 390 ? ? vi c = 50 a i c = 1ma i e = 50 a v cb = 80v v eb = 4v i c /i b = 500ma/20ma v ce = 10v, i e = ? 50ma, f = 100mhz v ce = 3v, i c = 0.5a ? v cb = 10v, i e = 0a, f = 1mhz v v a a v ? 82 ? 390 ? 120 ? 390 ? mhz pf typ. max. unit conditions ? measured using pulse current
2sd1898 / 2sd1733 / 2sd1768s / 2sd1863 transistors ! ! ! ! packaging specifications and h fe package taping code 2sd1898 type t100 1000 h fe tl 2500 ? tp 5000 ? ? 2sd1733 ? ? 2sd1768s ? ? 2sd1863 pqr pqr qr r ?? tv2 2500 ? ? ? basic ordering unit (pieces) h fe values are classified as follows : item h fe r 180~390 q 120~270 p 82~180 ! ! ! ! electrical characteristic curves 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 collector current : i c (ma) base to emitter voltage : v be (v) fig.1 grounded emitter propagation characteristics 1000 100 10 1 ta=25 c v ce =5v 24 0810 6 collector current : i c ( a) collector to emitter voltage : v ce ( v) fig.2 grounded emitter output characteristics 1.0 0 0.8 0.6 0.4 0.2 6ma 5ma 4ma 3ma 2ma 1ma i b =0ma ta=25 c 0 100 1000 100 0 10 1000 dc current gain : h fe collector current : i c ( ma) fig.3 dc current gain vs. collector current ta=25 c v ce =3v 1v 0.01 0.1 1.0 2.0 0.2 0.02 0.05 0.5 100 0 10 1000 collector saturation voltage : v ce(sat) ( v) collector current : i c ( ma) fig.4 collector-emitter saturation voltage vs. collector current i c /i b =20/1 ta=25 c 10/1 1 2 5 10 20 50 100 200 500 1000 transition frequency : f t (mhz) emitter current : ? i e (ma) fig.5 gain bandwidth product vs. emitter current 500 200 100 50 20 10 5 2 ta=25 c v ce =5v 0.1 0.2 0.5 1 2 5 10 20 50 100 collector output capacitance : cob ( pf) emitter input capacitance : cib ( pf) collector to base voltage : v cb ( v) emitter to base voltage : v eb ( v) fig.6 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage 100 1000 10 1 ta=25 c f=1mhz i e =0a ic=0a
2sd1898 / 2sd1733 / 2sd1768s / 2sd1863 transistors collector to emitter voltage : v ce (v) collector current : i c (a) 0.1 0.2 0.5 1 2 5 10 20 50 100 500 200 1000 10 5 2 1 20m 10m 5m 2m 1m 50m 100m 200m 500m ic max (pulse) ta=25 c single non-repetitive pulse pw=10m s pw=100ms dc fig.7 safe operating area (2sd1863) ic max (pulse) ta=25 c single non-repetitive pulse pw=10m s pw=100ms dc collector to emitter voltage : v ce ( v) collector current : i c ( a) 0.1 0.2 0.5 1 2 5 10 20 50 100 500 200 1000 10 5 2 1 20m 10m 5m 2m 1m 50m 100m 200m 500m fig.8 safe operating area (2sd1898)
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